Sunday, August 5, 2012

Texas Instruments ULN2803A pdf datasheet download

ULN2803A

500-mA Rated Collector Current (Single
Output)
High-Voltage Outputs . . . 50 V
Output Clamp Diodes
Inputs Compatible With Various Types of
Logic
Relay Driver Applications
Compatible with ULN2800A Series

description/ordering information

The ULN2803A is a high-voltage, high-current
Darlington transistor array. The device consists of
eight npn Darlington pairs that feature
high-voltage outputs with common-cathode
clamp diodes for switching inductive loads. The
collector-current rating of each Darlington pair is
500 mA. The Darlington pairs may be connected
in parallel for higher current capability.

Applications include relay drivers, hammer drivers, lamp drivers, display drivers (LED and gas discharge), line
drivers, and logic buffers. The ULN2803A has a 2.7-kΩ series base resistor for each Darlington pair for operation
directly with TTL or 5-V CMOS devices.

absolute maximum ratings at 25°C free-air temperature (unless otherwise noted)†
Collector-emitter voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 V
Input voltage (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V
Continuous collector current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mA
Output clamp diode current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mA
Total substrate-terminal current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −2.5 A
Package thermal impedance, θJA (see Notes 2 and 3): DW package . . . . . . . . . . . . . . . . . . . . . . . 73.14°C/W
N package . . . . . . . . . . . . . . . . . . . . . . . . . 62.66°C/W
Operating virtual junction temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150°C
Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65°C to 150°C
† Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTES: 1. All voltage values, unless otherwise noted, are with respect to the emitter/substrate terminal GND.
2. Maximum power dissipation is a function of TJ(max), θJA, and TA. The maximum allowable power dissipation at any allowable
ambient temperature is PD = (TJ(max) − TA)/θJA. Operating at the absolute maximum TJ of 150°C can affect reliability.
3. The package thermal impedance is calculated in accordance with JESD 51-7.

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